碲锌镉小角晶界的反射式X射线衍射形貌  

Characterization of Low-angle Grain Boundary of CdZnTe Single Crystalsby X-ray Diffraction Topography in Reflection

作　　者：孙士文[1] 隋淞印 何力[1] 周昌鹤[1] 虞慧娴[1] 徐超[1] 

机构地区：[1]中国科学院红外成像材料与器件重点实验室,上海200083

出　　处：《红外技术》2014年第7期588-591,共4页Infrared Technology

基　　金：国家自然科学基金项目;编号:60606026

摘　　要：碲锌镉晶体中存在着各种晶体缺陷,其中小角晶界是制约碲锌镉晶体质量的主要晶体缺陷之一。X射线衍射形貌术是一种非破坏性地全面研究小角晶界缺陷的有效方法。采用反射式X射线衍射形貌术对碲锌镉衬底的小角晶界缺陷进行了研究,讨论了小角晶界类型、样品扫描方向以及入射线发散度等对小角晶界缺陷的X射线衍射形貌的影响。为全面获得小角晶界缺陷的衍射形貌,应尽量选择宽的入射线狭缝,对于对称倾侧晶界和扭转晶界,应分别平行和垂直于小角晶界方向扫描。In the Cadmium Zinc Telluride （CdZnTe） single crystals, many kinds of typical crystal defects could be observed, among which low-angle grain boundary is the major one. X-ray diffraction topography is a powerful method for the investigation of low-angle grain boundary defect without destruction to the sample. In this paper, low-angle grain boundary defects of CdZnTe substrate were investigated by X-ray diffraction topography in reflection. The effect of the types of low-angle grain boundary, scanning direction and the divergence of incident beam on the X-ray diffraction topography was studied. The results show that the large slit should be applied for taking the whole topography of low-angle grain boundary defects. For taking the best topography, scanning direction parallel to the low-angle grain boundary should be applied for symmetrical low-angle tilt grain boundary. And scanning direction vertical to the low-angle grain boundary should be applied for low-angle twist grain boundary.

关 键 词：X射线衍射形貌术 X光貌相 碲锌镉 晶体缺陷 小角晶界 

分 类 号：TN3[电子电信—物理电子学]