Ca_(1-x)Y_xBi_4Ti_4O_(15)铁电材料的结构和电性能研究  

Study on Structure and Electrical Properties of Ca_(1-x)Y_xBi_4Ti_4O_(15) Ferroelectric Materials

作　　者：王斌[1] 李丹洋[1] 符小艺[1] 何新华[1] 

机构地区：[1]华南理工大学材料科学与工程学院,广州510640

出　　处：《人工晶体学报》2014年第6期1396-1401,共6页Journal of Synthetic Crystals

基　　金：广东省科技计划项目(2007A010500012);国家自然科学基金(21103052)

摘　　要：采用传统的固相反应法制备铋层结构铁电陶瓷材料Ca1-xYxBi4Ti4O15＋x/2（x=0~0.1）（简称CYBT）,研究了钇离子掺杂对CYBT陶瓷的烧结、晶相组成、显微形貌及电性能的影响。Y3＋的A位取代,可以改善CYBT陶瓷的烧结性能,提高体积密度和瓷体致密度。Y3＋的引入促进晶粒沿c轴方向生长,晶粒各向异性减小,室温介电常数增加。Y掺杂后离子半径差别和A空位浓度增加所产生的晶格畸变,使陶瓷的居里温度显著升高,当掺杂量x=0.10时,Tc升高了约80℃。Y掺杂显著降低了高温损耗,掺杂量x=0.075的样品表现出最好的压电性能,压电常数d33为15 pC/N。Bismuth layer-structured ferroelectric ceramics,Ca1-xYxBi4Ti4O15 ＋ x/2（x = 0 ~ 0.1）（Abbr.CYBT）,are fabricated by the conventional solid state reaction route.The effect of Y3 ＋doping on sintering behavior,crystalline phase,microstructure,and electric properties of CYBT ceramics is investigated.The substitution of Y3 ＋for A site is beneficial to improve sintering processing and increase volume density of CYBT ceramics.The introduction of Y3 ＋would enhance grain growth along c axis,decrease anisotropy of grain and increase dielectric constant at room temperature.Lattice deformation resulting from different ions radius and the increasing concentration of A-site vacancies via Y3 ＋doping,results in a significant increase in Curie temperature Tcby about 80 ℃ at a doping content of x = 0.10.Dielectric loss at high temperature decreases with Y doping,and the x = 0.075 Y3 ＋-doped sample exhibits optimum piezoelectric properties with a d33value of 15 pC/N.

关 键 词：Ca1-xYxBi4Ti4O15 钇离子掺杂 晶格畸变 居里温度 压电性能 

分 类 号：TM271.4[一般工业技术—材料科学与工程]