高温高压金刚石衬底上的同质外延生长研究  

Homoepitaxial Growth of Diamond Single Crystal on HPHT Substrates

作　　者：严垒[1] 马志斌[1] 曹为[1] 吴超[1] 高攀[1] 张田田[1] 

机构地区：[1]武汉工程大学材料科学与工程学院、湖北省等离子体化学与新材料重点实验室,武汉430073

出　　处：《人工晶体学报》2014年第6期1420-1424,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(10875093)

摘　　要：在自主研发的小功率微波等离子体化学气相沉积(MPCVD)装置上利用高温高压(HPHT)单晶金刚石片为衬底进行了金刚石同质外延生长的研究。研究了甲烷浓度、工作气压对金刚石生长速率的影响。测量了金刚石外延生长过程中等离子体的发射光谱,利用扫描电子显微镜(SEM)和数码相机对生长前后金刚石的形貌进行了表征,利用激光拉曼光谱对金刚石的质量进行了分析。结果表明:一定程度内,适当升高工作气压和甲烷浓度能够有效提高金刚石的生长速率;在外延生长过程会产生过多的丘状体,导致许多金刚石颗粒的产生,影响其生长时间和质量,通过生长、刻蚀相结合的方法能够有效延长生长时间,改善生长形貌;外延生长出的金刚石的激光拉曼图谱中金刚石1332 cm-1特征峰明显、尖锐,荧光背底低,非金刚石相特征峰较低。Homoepitaxy of diamond single crystal on high pressure high temperature（HPHT） diamond substrate has been studied using self-developed device of low power microwave plasma chemical vapor deposition（MPCVD）.The effects of methane concentration and pressure on growth rate are researched in this paper.In the process of growth,the plasma emission spectroscopy is measured.The surface morphology is presented by scanning electron microscopy（SEM） and digital camera,and the quality of diamond is characterized by Raman spectrum.The results show that the growth rate of diamond will increase with the rise of pressure and methane concentration.The quality and duration will be obstructed by the formation of hillock which may turn to polycrystalline diamond.A new experimental scheme combing growth and etching can improve the quality and duration effectively.In the Raman spectrum,the characteristic peak of diamond at 1332 cm-1is very intense and sharp,comparing with relative low characteristic peaks of non-diamonds.

关 键 词：高温高压 金刚石单晶 同质外延 

分 类 号：P575[天文地球—矿物学]