Growth of a-Plane InN Film and Its THz Emission  

作　　者：王光兵 赵国忠 郑显通 王平 陈广 荣新 王新强 

机构地区：[1]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 [2]Collaborative Innovation Center of Quantum Matter, Beijing 100871 [3]Department of Physics, Capital Normal University, Beijing 100048

出　　处：《Chinese Physics Letters》2014年第7期160-163,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant No 2012CB619300, the National Natural Science Foundation of China under Grant Nos 61225019, 11023003 and 61376060, and the National High-Technology Research and Devel- opment Program of China under Grant No 2011AA050514.

摘　　要：We report the growth of a-plane InN on an r-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. It is found that the a-plane InN is successfully grown by using a CaN buffer layer, which has been confirmed by reflection high-energy electron diffraction, x-ray diffraction and Raman scattering measurements. The Hall effect measurement shows that the electron mobility of the as-grown a-plane InN is about 406 cm^2/V·s with a residual electron concentration of 5.7 × 10^18 cm^-3. THz emission from the a-plane InN film is also studied, where it is found that the emission amplitude is inversely proportional to the conductivity.We report the growth of a-plane InN on an r-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. It is found that the a-plane InN is successfully grown by using a CaN buffer layer, which has been confirmed by reflection high-energy electron diffraction, x-ray diffraction and Raman scattering measurements. The Hall effect measurement shows that the electron mobility of the as-grown a-plane InN is about 406 cm^2/V·s with a residual electron concentration of 5.7 × 10^18 cm^-3. THz emission from the a-plane InN film is also studied, where it is found that the emission amplitude is inversely proportional to the conductivity.

分 类 号：TN304.2[电子电信—物理电子学] O4-27[理学—物理]