Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices  

作　　者：曹玉飞 蔡凯明 黎丽君 鲁文建 孙玉平 王开友 

机构地区：[1]The State Key Laboratory of Superlattices and Mierostructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 [2]Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031

出　　处：《Chinese Physics Letters》2014年第7期164-167,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2011CB922200, 2014CB643903 and 2011CBA00111, the National Natural Science Foundation of China under Grant Nos 11174272 and 61225021, the ＇100 Talents Project＇ of Chinese Academy of Sciences of China, the Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences＇ Large-scale Scientific Facility under Grant No U1232139, and the Director＇s Fund of Hefei Institutes of Physical Science of Chinese Academy of Sciences under Grant No YZJJ201311.

摘　　要：We carefully investigate the transport and capacitance properties of few layer charge density wave （CDW） 2HTaS2 devices. The CDW transition temperature and the threshold voltage vary from device to device, which is attributed to the interlayer interaction and inhomogeneous local defects of these micro-devices based on few layer 2H-TaS2 flakes. The nonlinear rather than linear current voltage characteristic of 2H-TaS2 devices is observed in our experiment at low temperature. The temperature dependence of the relative threshold voltage can be scaled to （1 - T /Tr ）^0.5＋δ with δ = 0.08 for the different measured devices with the presence of the CDWs. The conductance-voltage and capacity-voltage measurements are performed simultaneously. At very low ac active voltage, we find that the hysteresis loops of these two measurements exactly match each other. Our results point out that the capacity-voltage measurements can also be used to define the threshold depinning voltage of the CDW, which gives us a new method to investigate the CDWs.We carefully investigate the transport and capacitance properties of few layer charge density wave （CDW） 2HTaS2 devices. The CDW transition temperature and the threshold voltage vary from device to device, which is attributed to the interlayer interaction and inhomogeneous local defects of these micro-devices based on few layer 2H-TaS2 flakes. The nonlinear rather than linear current voltage characteristic of 2H-TaS2 devices is observed in our experiment at low temperature. The temperature dependence of the relative threshold voltage can be scaled to （1 - T /Tr ）^0.5＋δ with δ = 0.08 for the different measured devices with the presence of the CDWs. The conductance-voltage and capacity-voltage measurements are performed simultaneously. At very low ac active voltage, we find that the hysteresis loops of these two measurements exactly match each other. Our results point out that the capacity-voltage measurements can also be used to define the threshold depinning voltage of the CDW, which gives us a new method to investigate the CDWs.

分 类 号：TM53[电气工程—电器] TN16[电子电信—物理电子学]