TixSb2Te Thin Films for Phase Change Memory Applications  

作　　者：唐时宇 李润 欧欣 许含霓 夏奕东 殷江 刘治国 

机构地区：[1]Department of Materials Science and Engineering, and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 [2]Department of Physics, and National Laboratory of Solid State Mierostructures, Nanjing University, Nanjing 210093

出　　处：《Chinese Physics Letters》2014年第7期222-225,共4页中国物理快报（英文版）

基　　金：Supported by the State Key Program for Basic Research of China under Grant No 2010CB630704, the National Natural Science Foundation of China under Grant No 11174135, the Fundamental Research Funds for the Central Universities under Grant Nos 1095021336 and 1092021307, and the Fund of Priority Academic Program Development of Jiangsu Higher Education Institutions.

摘　　要：Sb2 Te films with different Ti contents （TixSb2 Te） are derived via the target-attachment method by using the magnetron sputtering technique. The effects of the Ti content on the phase change characteristics and the microstructures are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atom force microcopy. Resistance-temperature measurements are carried out to reveal the enhanced crystallization temperature of TixSb2 Te films, indicating a better thermal stability in such films. Both the activation energy and the temperature for 10 y data retention increase with increasing the concentration of Ti. It indicates that the crystallization of the amorphous Sb2 Te film could be suppressed by the introduction of Ti. The improvement of crystallization temperature and the thermal stability of the amorphous Sb2 Te film results from the introduction of Ti in Sb- Te bond that decreases the binding energy of Sb 4d and Te 4d.Sb2 Te films with different Ti contents （TixSb2 Te） are derived via the target-attachment method by using the magnetron sputtering technique. The effects of the Ti content on the phase change characteristics and the microstructures are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atom force microcopy. Resistance-temperature measurements are carried out to reveal the enhanced crystallization temperature of TixSb2 Te films, indicating a better thermal stability in such films. Both the activation energy and the temperature for 10 y data retention increase with increasing the concentration of Ti. It indicates that the crystallization of the amorphous Sb2 Te film could be suppressed by the introduction of Ti. The improvement of crystallization temperature and the thermal stability of the amorphous Sb2 Te film results from the introduction of Ti in Sb- Te bond that decreases the binding energy of Sb 4d and Te 4d.

分 类 号：O484.1[理学—固体物理] TP333[理学—物理]