椭圆柱二维光子晶体带隙特性的数值模拟  

Elliptic cylinder numerical simulation of two-dimensional photonic crystal band gap characteristics

作　　者：江力森.吾拉汗 闫昕[2] 李院平[2] 宗明吉[2] 张裕仕[2] 

机构地区：[1]伊犁师范学院电子与信息工程学院,新疆伊宁835000 [2]枣庄学院光电工程学院,山东枣庄277160

出　　处：《激光杂志》2014年第7期30-32,共3页Laser Journal

基　　金：山东省2013年科技发展计划项目(2013GGA04021);山东省2013年高等学校科技计划项目(J13LN07)资助课题

摘　　要：本文应用平面波展开法数值模拟了椭圆柱二维光子晶体TM模带隙特性,数值模拟椭圆长短半轴对带隙特性的影响,结果得到:当椭圆长短半轴趋于相等时形成带隙宽度逐渐增加。数值模拟四种材料即SiC、GaAs、Ge和ZnO构成椭圆柱正方晶格二维光子晶体时,TM模带隙特性和第一带隙变化情况,结果得到介电常数高的材料形成较宽带隙,随着介电常数的增加,第一带隙上下边界的归一化频率逐渐降低,但是,第一带隙带隙宽度逐渐增加。The application of plane wave expansion method to numerical simulation of the elliptic cylinder two-dimensional photonic crystals with TM band gap characteristics, numerical simulation of elliptic half shaft length effect on the characteristic of band gap is presented. The results show when the length of the ellipse equals the half shaft tends to form a band gap width gradually increase the numerical simulation of four kinds of material SiC GaAs Ge and ZnO elliptic cylinder tetragonal TM modes when two-dimensional photonic crystal band gap character-istics and the change of the gap, the resulting material form the broadband gap, high dielectric constant with the in-crease of dielectric constant of the first gap upper and lower boundary of the normalized frequency gradually reduce, but the first gap width of band gap increased gradually.

关 键 词：椭圆柱光子晶体 带隙特性 平面波展开法 

分 类 号：O431.1[机械工程—光学工程]