Mn-Co-Ni红外探测器As-Se光学薄膜制备及性能研究  

Research on Preparation and Properties of As-Se Opticel Thin Film of Mn-Co-Ni IR Detectors

作　　者：杨宇[1] 李岩[1] 张弓[2] 马莒生[3] 

机构地区：[1]北京控制工程研究所,北京100190 [2]清华大学机械工程系,北京100083 [3]清华大学材料学院,北京100083

出　　处：《新技术新工艺》2014年第7期64-66,共3页New Technology & New Process

摘　　要：采用真空热蒸发方法,在Ge基底上沉积As-Se光学薄膜（下述简称薄膜）,考察薄膜中As含量对于薄膜软化点、14~16μm红外波段折射率及透射率的影响。通过XRF分析薄膜组成,并通过DTA 及维卡法分析薄膜软化点,利用PE Spectrum100型红外光谱议,分析薄膜在14~16μm波段的透射率,利用红外干涉仪分析折射率。结果表明,As-Se薄膜制备过程中的元素损失较小,薄膜软化点随薄膜As含量不断升高,薄膜在14和16μm波段的折射率随As含量增大而增加,透射率随As含量增大而减小,中心波段透射率超过55%。The As-Se thin film was grown on Ge substrate by vacuum sublimation as medium layer.The influence of the As content in the film on the soft point,refractive index and transmission were investigated.XRF,DTA,infrared spec-trometer and infrared interferometer were employed to analyze the contents,soft point,transmission and refractive index, respectively.The results show that the soft point of the thin film increased with the As contents.The contents of As and Se had no obvious change in the preparation of the film.The refractive index at 14μm and 16μm increasing by increasing the As contents in the film with the transmission decreasing.The central wavelength transmission exceeded 5 5%.

关 键 词：红外探测器 As-Se光学薄膜 真空热蒸发 性能 

分 类 号：V11[航空宇航科学与技术—人机与环境工程]