氧化铟纳米线在紫外光探测下的特性分析  

Characteristic Analysis of Indium Oxide Nanowires under UV Light Detection

作　　者：张卫红[1] 郑玉浩 刘春光[1] 

机构地区：[1]东北电力大学化学工程学院,吉林吉林132012

出　　处：《化工自动化及仪表》2014年第6期684-687,共4页Control and Instruments in Chemical Industry

基　　金：国家自然科学基金资助项目(21373043)

摘　　要：采用激光剥离等手段设计制作氧化铟纳米线器件。根据纳米线的光检测特性,指出将氧化铟纳米线的器件暴露于紫外光下,纳米线的电导会增大,器件响应时间变短,栅极阈值电压变化大的特性,重点介绍器件对不同波长紫外光的灵敏度。最后用实验证明了紫外光可以作为氧化铟纳米线化学传感器的"气体清理剂",使器件恢复时间缩短至80s。Making use of the means like laser lift-off,the In2O3nanowire sensor was designed; and based on the light detection properties of nanowires,the characteristics like the nanowires＇ conductance increasing and the sensor＇s response time becoming short and the change of gate threshold voltage becoming obvious while exposing the indium oxide nanowires to UV light were observed; and the emphasis was directed to introducing sensitivity of the sensor exposed to the ultraviolet light with different wavelength. The experimental result shows that the ultraviolet light can be used as chemical sensor＇s＂gas cleaning agent＂of the indium oxide nanowires,and it can shorten recovery time of the device to 80s.

关 键 词：氧化铟纳米线 光检测特性 灵敏度 气体清理剂 

分 类 号：TQ133.53[化学工程—无机化工]