化学水浴法制备薄膜太阳电池缓冲层材料的研究进展  

Research development on chemical bath deposited buffer layer materials of thin film dolar cells

作　　者：刘颖[1] 缪彦美 郝瑞亭[1] 杨海刚[2] 邓书康[1] 郭杰[1] 

机构地区：[1]云南师范大学太阳能研究所,可再生能源材料先进技术与制备教育部重点实验室,昆明650092 [2]河南师范大学物理与电子工程学院,河南省光伏材料重点实验室,新乡453007

出　　处：《化工新型材料》2014年第7期6-8,共3页New Chemical Materials

基　　金：国家自然科学基金(61176127,61006085,61274137);

摘　　要：从各反应条件对薄膜生长及其性能影响的角度,对CdS缓冲层的制备工艺进行了评述,并对新型无镉缓冲层的研究进展给予了重点介绍。最后展望了薄膜太阳电池缓冲层材料的发展方向,并指出了其发展应用中需要解决的问题。The preparing process of CdS buffer layers were commented through the influence of reaction conditions on the growth and properties of thin films, and the research development of the new cadmium-free buffer layer was introduced with emphasis. The development direction of the buffer layer materials was finally prospected, and the problems must to be solved in development and application were also discussed.

关 键 词：薄膜太阳电池 缓冲层 化学水浴 

分 类 号：TM914.4[电气工程—电力电子与电力传动]