Thermal effect of Ge_2Sb_2Te_5 in phase change memory device  

作　　者：李俊焘 刘波 宋志棠 任堃 朱敏 徐佳 任佳栋 冯高明 任万春 童浩 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences [2]University of the Chinese Academy of Sciences [3]Semiconductor Manufacturing International Corporation

出　　处：《Chinese Physics B》2014年第8期121-124,共4页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant Nos.2010CB934300,2011CBA00607,and 2011CB9328004);the National Integrate Circuit Research Program of China(Grant No.2009ZX02023-003);the National Natural Science Foundation of China(Grant Nos.60906004,60906003,61006087,61076121,61176122,and 61106001);the Funds from the Science and Technology Council of Shanghai,China(Grant No.12nm0503701)

摘　　要：In the fabrication of phase change random access memory （PRAM） devices, high temperature thermal processes are inevitable. We investigate the thermal stability of GezSb2Te5 （GST） which is a prototypical phase change material. After high temperature process, voids of phase change material exist at the interface between Ge2Sb2Te5 and substrate in the initial open memory cell. This lower region of GezSb2Te5 is found to be a Te-rich phase change layer. Phase change memory devices are fabricated in different process conditions and examined by scanning electron microscopy and energy dispersive X-ray. It is found that hot-chuck process, nitrogen-doping process, and lower temperature inter-metal dielectric （IMD） deposition process can ease the thermal impact of line-GST PRAM cell.In the fabrication of phase change random access memory （PRAM） devices, high temperature thermal processes are inevitable. We investigate the thermal stability of GezSb2Te5 （GST） which is a prototypical phase change material. After high temperature process, voids of phase change material exist at the interface between Ge2Sb2Te5 and substrate in the initial open memory cell. This lower region of GezSb2Te5 is found to be a Te-rich phase change layer. Phase change memory devices are fabricated in different process conditions and examined by scanning electron microscopy and energy dispersive X-ray. It is found that hot-chuck process, nitrogen-doping process, and lower temperature inter-metal dielectric （IMD） deposition process can ease the thermal impact of line-GST PRAM cell.

关 键 词：phase change memory Ge2Sb2Te5 thermal effect failure analysis 

分 类 号：O521.23[理学—高压高温物理]