Bipolar resistance switching in the fully transparent BaSnO_3-based memory device  

作　　者：张婷 殷江 赵高峰 张伟风 夏奕东 刘治国 

机构地区：[1]National Laboratory of Solid State Microstructure, Nanjing University [2]Key Laboratory of Photovoltaic Materials of Henan Province, School of Physics and Electronics, Henan University

出　　处：《Chinese Physics B》2014年第8期481-486,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11174135 and 60976016);the National 973 Project,China(Gant No.0213117005);the State Key Program for Basic Research of China(Grant No.2010CB630704);the Science Foundation of Henan Province,China(Grant No.14A430020);the Science Foundation of Henan University,China(Grant No.SBGJ090503);China Postdoctoral Science Foundation(Grant No.2012M511250)

摘　　要：The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light, an initial forming process is unnecessary for the production of transparent memory. Fittings to the current-voltage curves reveal the interfacial conduction in the devices. The first-principles calculation indicates that the oxygen vacancies in cubic BaSnO3 will form the defective energy level below the bottom of conduction band. The field-induced resistance change can be explained based on the change of the interracial Schottky barrier, due to the migration of oxygen vacancies in the vicinity of the interface. This work presents a candidate material BaSnO3 for the application of resistive random access memory to transparent electronics.The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light, an initial forming process is unnecessary for the production of transparent memory. Fittings to the current-voltage curves reveal the interfacial conduction in the devices. The first-principles calculation indicates that the oxygen vacancies in cubic BaSnO3 will form the defective energy level below the bottom of conduction band. The field-induced resistance change can be explained based on the change of the interracial Schottky barrier, due to the migration of oxygen vacancies in the vicinity of the interface. This work presents a candidate material BaSnO3 for the application of resistive random access memory to transparent electronics.

关 键 词：transparent resistive random access memory resistance switching oxygen vacancy BaSnO3 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]