Forward and reverse electron transport properties across a CdS/Si multi-interface nanoheterojunction  

作　　者：李勇 王伶俐 王小波 闫玲玲 苏丽霞 田永涛 李新建 

机构地区：[1]Department of Physics and Laboratory of Materials Physics, Zhengzhou University [2]Department of Physics and Solar Energy Research Center, Pingdingshan University

出　　处：《Chinese Physics B》2014年第8期502-507,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61176044 and 11074224);the Science and Technology Project for Innovative Scientist of Henan Province,China(Grant No.1142002510017);the Science and Technology Project on Key Problems of Henan Province,China(Grant No.082101510007)

摘　　要：The electron transport behavior across the interface plays an important role in determining the performance of op- toelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporous pillar array, an untraditional, nonplanar, and multi-interface CdS/Si nanoheterojunction is prepared. The current density versus voltage curve is measured and an obvious rectification effect is observed. Based on the fitting results and model analyses on the forward and reverse conduction characteristics, the electron transport mechanism under low forward bias, high forward bias, and reverse bias are attributed to the Ohmic regime, space-charge-limited current regime, and modified Poole-Frenkel regime respectively. The forward and reverse electrical behaviors are found to be highly related to the distribution of inter- facial trap states and the existence of localized electric field respectively. These results might be helpful for optimizing the preparing procedures to realize high-performance silicon-based CdS optoelectronic devices.The electron transport behavior across the interface plays an important role in determining the performance of op- toelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporous pillar array, an untraditional, nonplanar, and multi-interface CdS/Si nanoheterojunction is prepared. The current density versus voltage curve is measured and an obvious rectification effect is observed. Based on the fitting results and model analyses on the forward and reverse conduction characteristics, the electron transport mechanism under low forward bias, high forward bias, and reverse bias are attributed to the Ohmic regime, space-charge-limited current regime, and modified Poole-Frenkel regime respectively. The forward and reverse electrical behaviors are found to be highly related to the distribution of inter- facial trap states and the existence of localized electric field respectively. These results might be helpful for optimizing the preparing procedures to realize high-performance silicon-based CdS optoelectronic devices.

关 键 词：HETEROJUNCTION multi-interface nanoheterojunction electron transport silicon nanoporous pillararray （Si-NPA） CdS/Si-NPA 

分 类 号：O562[理学—原子与分子物理]