Effects of graphene defects on Co cluster nucleation and intercalation  

作　　者：徐文焱 黄立 阙炎德 林晓 王业亮 杜世萱 高鸿钧 

机构地区：[1]Institute of Physics, Chinese Academy of Sciences [2]University of Chinese Academy of Sciences

出　　处：《Chinese Physics B》2014年第8期568-571,共4页中国物理B（英文版）

基　　金：Project supported by Funds from the Ministry of Science and Technology of China(Grant Nos.2013CBA01600 and 2011CB932700);the National Natural Science Foundation of China(Grant Nos.61222112 and 11334006);the Funds from the Chinese Academy of Sciences

摘　　要：Four kinds of defects are observed in graphene grown on Ru （0001） surfaces. After cobalt deposition at room tem- perature, the cobalt nanoclusters are preferentially located at the defect position. By annealing at 530 ℃, cobalt atoms intercalate at the interface of Graphene/Ru （0001） through the defects. Further deposition and annealing increase the sizes of intercalated Co islands. This provides a method of controlling the arrangement of cobalt nanoclusters and also the den- sity and the sizes of intercalated cobalt islands, which would find potential applications in catalysis industries, magnetism storage, and magnetism control in future information technology.Four kinds of defects are observed in graphene grown on Ru （0001） surfaces. After cobalt deposition at room tem- perature, the cobalt nanoclusters are preferentially located at the defect position. By annealing at 530 ℃, cobalt atoms intercalate at the interface of Graphene/Ru （0001） through the defects. Further deposition and annealing increase the sizes of intercalated Co islands. This provides a method of controlling the arrangement of cobalt nanoclusters and also the den- sity and the sizes of intercalated cobalt islands, which would find potential applications in catalysis industries, magnetism storage, and magnetism control in future information technology.

关 键 词：GRAPHENE DEFECTS COBALT INTERCALATION scanning tunneling microscopy 

分 类 号：O483[理学—固体物理]