Quantum percolation tunneling current 1/f^γ noise model for high-κ gate stacks Bi-layer breakdown  

作　　者：LIU YuAn ZHANG YiQi LI Cong 

机构地区：[1]School of Microelectronics, Xidian University

出　　处：《Science China(Physics,Mechanics & Astronomy)》2014年第9期1637-1643,共7页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61076101 and 61204092)

摘　　要：Based on the elastic trap-assisted tunneling mechanism in high-κgate stacks,a quantum percolation tunneling current 1/fγ noise model is proposed by incorporating quantum tunneling theory into the quantum percolation model.We conclude that the noise amplitude of the PSD(Power Spectral Density)for three stages,namely the fresh device,one-layer BD(breakdown),and two-layer BD,increases from 10-22→10-14→10-8 A2/Hz.Meanwhile,the noise exponent γ for the three stages,has the 1/f2type(γ→2),1/fγ type(γ→1~2),and 1/f type(γ→1),respectively.The simulation results are in good agreement with the experimental results.This model reasonably interprets the correlation between the bi-layer breakdown and the tunneling 1/fγ noise amplitude dependence and 1/fγ noise exponent dependence.These results provide a theoretical basis for the high-κ gate stacks bi-layer breakdown noise characterization methods.Based on the elastic trap-assisted tunneling mechanism in high-κgate stacks,a quantum percolation tunneling current 1/fγ noise model is proposed by incorporating quantum tunneling theory into the quantum percolation model.We conclude that the noise amplitude of the PSD（Power Spectral Density）for three stages,namely the fresh device,one-layer BD（breakdown）,and two-layer BD,increases from 10^-22→10^-14→10^-8 A^2/Hz.Meanwhile,the noise exponent γ for the three stages,has the 1/f^2type（γ→2）,1/f^γ type（γ→1~2）,and 1/f type（γ→1）,respectively.The simulation results are in good agreement with the experimental results.This model reasonably interprets the correlation between the bi-layer breakdown and the tunneling 1/f^γ noise amplitude dependence and 1/f^γ noise exponent dependence.These results provide a theoretical basis for the high-κ gate stacks bi-layer breakdown noise characterization methods.

关 键 词：1/f^γ noise quantum percolation tunneling MOSFETs high-κ gate stacks Bi-layer breakdown 

分 类 号：O413[理学—理论物理]