新型阴极弧电源研制及脉冲增强电子发射(P3e)效应研究  

Development of novel arc evaporation system and pulse enhanced electron emission(P3e)

作　　者：马英鹤[1] 田修波[1] 蔡明哲[1] 孙伟龙[1] 孔营[1] 寇睿[1] 巩春志[1] 

机构地区：[1]哈尔滨工业大学先进焊接与连接国家重点实验室,黑龙江哈尔滨150001

出　　处：《真空》2014年第4期31-34,共4页Vacuum

基　　金：国家自然科学基金(E050803;U1330110)

摘　　要：本文研制了新型脉冲阴极弧电源,并实现了脉冲增强电子发射(P3e)以提高真空室内等离子体密度。该电源核心由脉冲发射和维持电流系统构成,由单片机和触摸屏系统协同控制和管理。对P3e电源进行放电特性和脉冲增强电子发射效应进行了研究。结果表明,在相同平均电弧电流条件下,与直流相比,P3e技术能够显著提高工件(基体)脉冲电流与平均电流。在电弧平均电流90 A时,基体脉冲电流由5 A提高到19.6 A,基体平均电流由2.2 A最大提高到4.6 A,表明脉冲增强了电子发射,进而获得高的等离子体密度,这将有助于增加膜层致密性、降低膜层应力。该新型电源对于阴极弧靶中毒抑制、膜层结构改善、膜层颗粒污染控制具有重要的意义。A novel cathodic arc evaporation power supply has been developed and effect of pulse enhanced electron emission （P3e）was obtained. The power supply is composed of pulse emission unit and base current unit, and managed by micro- computer and touch screen. The discharge behavior and effect of pulse enhanced electron emission were discussed in this paper. The experimental results demonstrated that P3e mode increases substantially pulse/average current flowing through the substrate compared to conventional DC mode. With the average arc current of 90 A, the pulse substrate current increases to 19.5 A from 5 A and average substrate current rises to 4.6 A from 2.2 A. This behavior shows that P3e improves effectively electron emission and plasma density, which may increase density of deposited films and lower the internal stress. The novel power supply helps in target poison suppression, films structure improvement and macro particle reduction.

关 键 词：阴极弧 脉冲增强电子发射 脉冲电流 基体电流 等离子体密度 

分 类 号：TB79[一般工业技术—真空技术]