钨和钽电极材料对Lu_2O_3薄膜基阻变存储器的影响机制研究  

Effect of Tungsten and Tantalum Top Electrodes on Resistance Change Properties of Lu_2O_3-Based Memory Devices

作　　者：张艳[1] 赵鸿滨[1] 魏峰[1] 

机构地区：[1]北京有色金属研究总院先进电子材料研究所,北京100088

出　　处：《中国稀土学报》2014年第4期495-500,共6页Journal of the Chinese Society of Rare Earths

基　　金：国家自然科学基金项目(50932001;51102020;51202013);重大科技专项02专项(2013ZX02303)资助

摘　　要：采用脉冲激光沉积技术在Pt/Ti/SiO2/Si衬底上沉积了非晶Lu2O3薄膜,制作了W和Ta作为顶电极的W/Lu2O3/Pt和Ta/Lu2O3/Pt堆栈结构器件,并运用Keithely4200-SCS测试平台分析了其电阻转变特性。在对器件加载电压后,Ta/Lu2O3/Pt器件未表现出阻变存储特性,然而W/Lu2O3/Pt表现出良好的双极性电阻转变特性,其高低阻态比大于103。经过大于1×104s的读电压,高低阻态的电阻值没有发生明显的变化,表现出良好的数据保持能力。通过对高低阻态的电流电压关系、电阻值与器件面积的关系和电阻值与温度的关系的研究,分析认为导电细丝的形成和破灭机制是导致W/Lu2O3/Pt器件发生电阻转变现象的主要原因。The amorphous Lu2O3 thin films as resistance change material were deposited on the Pt /Ti /SiO2/Si substrates by pulsed laser deposition. W and Ta as the top electrode stack structure of the device W /Lu2O3/Pt and Ta /Lu2O3/ Pt were fabricated. And the resistive switching properties were analyzed by Keithely 4200-SCS test platform.The Ta /Lu2O3/Pt memory device exhibited no such switching performance as applying bias on both top and bottom electrodes,whereas the W /Lu2O3/Pt device revealed the bipolar memory switching behavior with a high resistance ratio of 103 and good data retention with memory window of about 104 s. By studying the relationship between current and voltage at low resistance state and high resistance state,the resistance values of W /Lu2O3/Pt device for different device area,and the temperature dependent resistance values of the device,we concluded that generation and rupture of a conductive filament,leads to resistive switching of W /Lu2O3/Pt device.

关 键 词：阻变存储器 氧化镥 电极材料 存储机制 

分 类 号：TN386.1[电子电信—物理电子学]