卤化法制备高纯钛过程中杂质Al的来源分析  

Source of Impurity Al in High Purity Titanium Preparad by Halide Process

作　　者：王睿[1] 陈肖虎[1] 李纪伟[1] 卢大磊[1] 唐晓宁[1] 

机构地区：[1]贵州大学材料与冶金学院,贵州贵阳550025

出　　处：《湿法冶金》2014年第4期309-312,共4页Hydrometallurgy of China

摘　　要：分析了卤化法高纯钛制备过程中铝的来源。试验条件下,杂质元素铝能在卤化源区（798～998K）与卤化剂反应,生成AlI3和Al2I6；在沉积区（1 473～1 673K）,铝的碘化物分解而污染高纯钛的行为可被有效抑制。结合热力学计算和试验结果,分析了高纯钛中杂质铝的来源。The source of Al in high purity titanium preparad by halide process was analyzed.Under the experiment conditions,the impurity Al can react with halogen agent to generate AlI3 and Al2I6in the halide source area（798-998K）.In the deposition area（1 473-1 673K）,the behavior of aluminium polluting high purity titanium as impurity because of decomposition of aluminium iodides can be avoided.The source of aluminium in the high purity titanium is analyzed by thermodynamic calculation and experimental results.

关 键 词：高纯钛 卤化法 杂质 铝 来源 热力学 

分 类 号：TF823[冶金工程—有色金属冶金] TF803.25