去噪后单晶硅表面形貌的反射率分析  

作　　者：徐瑞芬[1] 

机构地区：[1]丽水职业技术学院,浙江丽水323000

出　　处：《中国科技纵横》2014年第15期35-36,共2页China Science & Technology Overview

摘　　要：针对单晶硅表面在制绒时会有“凹坑”缺陷出现的现象，利用双正交提升小波bior4.4进行分段处理，将“凹坑”缺陷等价为“类三角形”的金字塔模型去噪。通过对去噪后的单晶硅绒面建立反射率的估计计算模型，进行反射率的估计计算。结果表明，将“凹坑”缺陷等价处理后能有效地降低反射率，同时得出单晶硅绒面的平均反射率与绒面的一致性存在一定的关系，有必要进一步控制绒面制造工艺因素，提高微结构的一致性。In view of the phenomenon of the pits occurred during the actual making of the texture surface, the wavelet lifting scheme of bior4.4 was selected for the subsection process, then the drop pits would be equaled to smal pyramids to reduce the reflectivity effectively. After the removal of the noises, a model was build to estimate the reflectivity. The results indicate that there is a gap between the practical and theideal reflectivity,and it is necessary to control the manufacture factors further,for improving the texture surface.

关 键 词：单晶硅表面形貌 凹坑 去噪 反射率 

分 类 号：O484.1[理学—固体物理]