无箔二极管强流电子束空间密度分布初步研究  

Preliminary study on space density distribution of intense electron beam in foilless diode

作　　者：霍少飞[1] 孙钧[1] 陈昌华[1] 梁玉钦 吴平[1] 张晓微[1] 白现臣[1] 

机构地区：[1]西北核技术研究所、高功率微波技术重点实验室,西安710024

出　　处：《强激光与粒子束》2014年第4期28-31,共4页High Power Laser and Particle Beams

摘　　要：通过在强磁场条件下,利用环形刀口石墨阴极（刀口尺寸φ38～39 mm）开展电子束轰击收集极内表面铜箔和垂直轰击金属靶片实验,对无箔二极管中电子束的空间密度分布进行了初步研究,并对其产生原因进行了分析.研究结果表明,电子束径向分布在φ37.2～40.2 mm,存在密度较高区域（φ38.8～39.4 mm）和密度最大值点（φ39.2 mm）,且均偏向于阴极外侧.无箔二极管环形阴极爆炸发射产生电子束的径向密度分布可用偏态分布近似.By electron beam impacting experiment of metal target and copper foil pasted on the inside surface of collector, with high magnetic field and annular graphite cathode(38-39mm),the space density distribution of electron beam in the foilless diode and its forming reasons are preliminarily studied.It is shown that the electron beam is at37.2-40.2mm in radial direction, and there are a high density region(38.8-39.4mm)and a density maximum(39.2mm)which tend to the outboard of the cathode in the electron beam.The radial density distribution of electron beam explosively emitted from the annular cathode of the foilless diode can be approximated by nonsymmetrical distribution.

关 键 词：无箔二极管 强流电子束 空间密度分布 

分 类 号：TN321[电子电信—物理电子学]