1．9μm激光器国内外发展状况研究  

Research on Development of 1.9 μm Laser at Home and Abroad

作　　者：朱国利[1] 孙建国[1] 张兵[1] 鞠有伦[2] 王月珠[2] 

机构地区：[1]中国电子科技集团公司第二十七研究所,郑州450047 [2]哈尔滨工业大学可调谐激光技术国防重点实验室,哈尔滨150001

出　　处：《电光系统》2014年第2期7-13,23,共8页Electronic and Electro-optical Systems

摘　　要：随着800nm附近半导体激光器的商品化，利用单掺Tm固体激光器和单掺Tm光纤激光器都可以获得高功率1．9μm激光，另外，1．9μm半导体激光器也在快速发展中。本文从激光器类型、激光器参数、输出性能等方面全面详细地研究了国内外1．9μm激光器的发展状况，对国内1．9μm激光器、2．1μm激光器和中波3～5μm激光的发展具有重要的指导意义。With the commercialization of diode laser near 800nm, high power 1.9 μm laser can be acquired by making use of Tm doped solid state laser and Tm doped fiber laser. In addition, 1.9μm diode laser is also in rapid development. This paper studies in detail both domestic and foreign development of 1.9 μm laser from laser type, laser parameter and output performance, which is of importance in guiding the development of domestic 1.9 μm laser, 2.1 μm laser and Mid -infrared 3 - 5 μm laser.

关 键 词：单掺Tm固体激光器 单掺Tm光纤激光器 1.9μm半导体激光器 

分 类 号：TN248[电子电信—物理电子学]