熔制温度对铁硅酸盐玻璃体积电阻率的影响  

Influence of Melting Temperature Iron Silicate Glass on the Volume Resistivity

作　　者：赵小齐[1] 王咏丽[1] 王琦[1] 张然[1] 

机构地区：[1]北京玻璃研究院,北京101111

出　　处：《硅酸盐通报》2014年第7期1640-1642,共3页Bulletin of the Chinese Ceramic Society

基　　金：东城区科技计划项目(2013-1-008)

摘　　要：在没有保护气氛情况下,对铁硅酸盐分别在不同熔制温度下进行熔制,并对玻璃进行电阻率测试,从而确定不同熔制温度对铁硅酸盐玻璃的体积电阻率的影响,进而分析不同熔制温度对电阻率影响的规律。为在无保护气氛下生产出电阻率达到1010数量级电阻玻璃提供熔制工艺技术依据。The iron silicate glass was melted under different melting temperatures in the absence of the protective atmosphere, and the electrical resistivity of the glass was measured. The effect of different melting temperature on the volume resistivity of iron silicate glass was determined, and then influence of melting temperature on the resistivity was analyzed. The conclusion could provide the technology reference for the production of glass with 10^10 order of magnitude resistivity without protective atmosphere.

关 键 词：MRPC 电极玻璃 体积电阻率 电子导电 熔制温度 

分 类 号：TQ173[化学工程—搪瓷工业]