激光二极管抽运的Nd:YVO_4连续自拉曼1175nm激光器  

Laser diode end-pumped continuous-wave Nd:YVO_4self-Raman laser at 1175 nm

作　　者：樊莉[1] 陈海涛[1] 朱骏[1] 

机构地区：[1]扬州大学物理科学与技术学院,扬州225002

出　　处：《物理学报》2014年第15期184-188,共5页Acta Physica Sinica

基　　金：江苏省自然科学基金青年科学基金(批准号:BK20130453);国家自然科学基金青年科学基金(批准号:11004170)资助的课题~~

摘　　要：报道了采用激光二极管端面抽运的Nd:YVO4晶体连续自拉曼激光器的实验研究.通过对晶体掺杂浓度及晶体结构的选择优化,减轻自拉曼晶体的热效应,实现了结构紧凑的1175 nm连续自拉曼激光器的高效运转.最终以两端键合的复合Nd:YVO4晶体作为自拉曼介质,在25.5 W的抽运功率下,获得了最高3.4 W的1175 nm连续拉曼光输出,光光转换效率为13.3%,拉曼阈值低至2.21 W,斜效率为14.6%.In this paper, an LD （laser diode） end-pumped continuous-wave Nd：YVO4 self-Raman laser at 1175 nm is reported. The doping concentration and structure of the self-Raman crystals are optimized to reduce the thermal effects of the crystal, and a high-efficient diode-end-pumped continuous-wave self-Raman laser operated at 1175 nm is demonstrated. Finally, the thermal effects are efficiently improved by using a double-end diffusion-bonded composite Nd：YVO4 crystal as a gain medium. An output power up to 3.4 W of the first-order Stokes line 1175 nm is achieved at the incident diode pump power of 25.5 W, corresponding to a diode-to-Stokes optical conversion efficiency of 13.3% and a slope efficiency of 14.6%. The Raman threshold is as low as 2.21 W of diode power at 808 nm.

关 键 词：自拉曼激光器 连续波 ND YVO4晶体 复合晶体 

分 类 号：TN248[电子电信—物理电子学]