一种太赫兹脉冲探测芯片性能分析  

Performance analysis of a sensing element for high power terahertz pulse measurement

作　　者：王雪锋[1,2] 王建国[1,3] 王光强[1,2] 李爽[1,2] 熊正锋 陆希成[1,2] 彭建昌[1,2] 

机构地区：[1]西北核技术研究所,西安710024 [2]高功率微波技术重点实验室,西安710024 [3]西安交通大学电子与信息工程学院,西安710049

出　　处：《强激光与粒子束》2014年第8期218-222,共5页High Power Laser and Particle Beams

基　　金：国家自然科学基金重点项目(61231003)

摘　　要：针对一种已经完成模拟设计、工艺研究及成品开发,且线度仅为百μm量级的太赫兹脉冲热载流子探测芯片展开了几何参数及电参数测试,并对其性能进行了分析探讨。结果表明:探测芯片具有较小的几何加工偏差和良好的欧姆接触效果;模拟计算的结果表明这种量级几何加工偏差对相对灵敏度影响可以忽略;综合分析各种测试测量结果,进一步验证了芯片开发工艺和测试结果的有效性。A thorough per（ormance analysis of a type of sensing element, which is designed and manufactured for application to high power terahertz pulse measurement based on hot electrons effect in semiconductor, is carried out by measuring the geo- metric and electric parameters. Sensing elements achieve a little deviation from the optimal value and an excellent ohmic touch. The deviation of the sensing element has little effect on the relative sensitivity, as the simulation result shows. Validity of the manufacturing techniques for the sensing element is proved by making a synthesis of all the parameters during the whole course of the measurement.

关 键 词：太赫兹 脉冲测量 芯片 大功率 性能分析 

分 类 号：O441.6[理学—电磁学] O473[理学—物理]