检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:李凯[1,2] 魏光辉[1] 潘晓东[1] 刘国红[3] 李新峰[1] 刘心愿[1] 孟祥凤[4]
机构地区:[1]军械工程学院静电与电磁防护研究所,石家庄050003 [2]武汉军械士官学校教练勤务团,武汉430074 [3]武汉军械士官学校雷达系,武汉430074 [4]军械工程学院车辆与电气工程系,石家庄050003
出 处:《强激光与粒子束》2014年第8期235-240,共6页High Power Laser and Particle Beams
基 金:国家973项目(6131380301)
摘 要:为研究贯通导体及其负载电路对金属腔体内部电磁场的影响,建立了不同贯通导体端接负载模型,使用电磁仿真软件CST进行仿真,利用GTEM室、矢量网络分析仪、功率放大器、ETS电场探头组建实验测试系统,验证了仿真结果的正确性,揭示了贯通导体及其电路对金属腔体内部电磁场的影响规律。研究结果表明:腔体内部电磁场同时受到贯通导体与腔体谐振的影响,在谐振频点干扰场强取得极大值,屏蔽效能取得极小值甚至为负值。贯通导体端接负载不接地与贯通导体两端开路情形相似,贯通导体端接负载直接接地时内部场显著降低,谐振频点降低,贯通导体端接负载浮点接地时内部场变化规律低频时与开路模型相似,高频时与直接接地模型相似。贯通导体端接负载的电阻值、电容值也会影响腔体的内部场。In order to study effect on electromagnetic field in enclosure affected by penetrating conducting and its circuit, dif- ferent models of penetrating and its circuit were established. Electromagnetic simulation software CST was used to do simulation. Experimental system was set up with a GTEM chamber, a vector network analyzer, a power amplifier and an ETS electric field probe to verify simulation results. Laws of influence on electromagnetic field in enclosure by penetrating conductor coupling and its terminal load effect were revealed. The results show that electromagnetic field in enclosure is affected by the combination of penetrating conductor resonance and enclosure resonance. Electric field strength got extremum at resonant frequency. Shielding effectiveness curve of penetrating conductor open at two terminals was close to the curve of penetrating conductor loading but not grounding model. Electric field of penetrating conductor loading grounding directly was significantly lower while resonant frequen- cy was reduced. Changing laws of penetrating conductor loading floating grounding was similar to model of penetrating conductor loading but not grounding in low frequency and similar to model of penetrating conductor loading grounding directly in high fre- quency. The value of resistance and capacity at terminal of penetrating conductor can also affect electric field.
关 键 词:贯通导体 负载电路 电磁干扰 屏蔽效能 电磁兼容 金属腔体
分 类 号:TM15[电气工程—电工理论与新技术]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.15