二相驱动帧转移型CCD电荷溢出现象分析及解决方法  

Analysis and Solution of Two-Phase FT-CCD Charge Overflow Phenomenon

作　　者：刘懿[1,2] 周青[1,2] 尹达一[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083 [2]中国科学院大学,北京100049

出　　处：《激光与光电子学进展》2014年第8期20-24,共5页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(40776100)

摘　　要：CCD接收到过强信号时会出现电荷溢出现象,对于无溢出漏级结构的CCD,需合理设置成像系统参数避免出现电荷溢出。针对滨松帧转移型CCD对非强目标成像时出现的电荷溢出现象,分析其原因是由行读出过程中成像区长时间电荷积累而导致的,通过积分之前的多次帧转移,有效解决了电荷溢出问题,并基于积分球实验进一步论证了原因及解决方法。Charge overflow phenomenon will arise when CCD is receiving strong signals. With CCD without overflow drains, the parameters of the imaging system have to be set properly to avoid charge overflow. Based on the charge overflow phenomenon when using HAMAMATSU Frame-Transfer CCD to image not so strong targets, according to the paper, it is caused by the long-time charge accumulation of the image section during line readout process. To remove the overflow signal effectively, multiple frame transfers are carried out before integration time. Integrating sphere tests are also performed to testify the reason and the solution.

关 键 词：光电子学 CCD 电荷溢出 成像控制 积分球实验 

分 类 号：TN386.5[电子电信—物理电子学]