基于高温漏电流指标的钽电容器优化筛选方案研究  

A Study of Optimized Selecting Program of Tantalum Capacitor Based on High Temperature Leakage Current Index

作　　者：蔡钧璞[1] 

机构地区：[1]中国电子科技集团公司第43研究所,合肥230088

出　　处：《混合微电子技术》2014年第1期52-56,46,共6页Hybrid Microelectronics Technology

摘　　要：钽电容器具有电性能优良，工作温度范围宽，形式多样且体积效率优异等诸多优点，在混合集成电路产品中广泛使用。本文结合钽电容器自身特性，通过对其自身缺陷导致失效的机理进行分析，提出了基于高温漏电流指标的优化筛选方案，并选取了某型号钽电容器进行可行性论证，力求通过此方案确保在今后的使用过程中提升钽电容器使用可靠性。Tantalum capacitor offers advantages of excellent electrical properties, wide temperature range and diversified forms with good volume efficiency,it is widely used in hybrid integrated circuits. According to the characteristics of tantalum capacitor and the analysis of the mechanism of its own defects, this thesis proposes a optimized selecting program of tantalum capacitors based on high temperature leakage current indicators and selects a model tantalum capacitor to develop a feasibility study. The aim is to promote the application reliability of tantalum capacitors in the future.

关 键 词：钽电容器 自身缺陷 漏电流 正态分布 

分 类 号：TN406[电子电信—微电子学与固体电子学]