Hole mobility enhancement in uniaxial stressed Ge dependence on stress and transport direction  

作　　者：MA JianLi FU ZhiFen LIU Peng ZHANG HeMing 

机构地区：[1]School of Physics and Information Technology, Shaanxi Normal University [2]Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University

出　　处：《Science China(Physics,Mechanics & Astronomy)》2014年第10期1860-1865,共6页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.51272150);the Postdoctoral Science Foundation of Shaanxi Province of China

摘　　要：Utilizing a six-band k.p valence band calculations that considered a strained perturbation Hamiltonian, uniaxial stress-induced valence band structure parameters for Ge such as band edge energy shift, split, and effective mass were quantitatively evaluated. Based on these valence band parameters, the dependence of hole mobility on uniaxial stress(direction, type, and magnitude) and hole transport direction was theoretical studied. The results show that the hole mobility had a strong dependence on the transport direction and uniaxial stress. The hole mobility enhancement can be found for all transport directions and uniaxial stess configurations, and the hole transport along the [110] direction under the uniaxial [110] compressive stress had the highest mobility compared to other transport directions and stress configurations.Utilizing a six-band k.p valence band calculations that considered a strained perturbation Hamiltonian, uniaxial stress-induced valence band structure parameters for Ge such as band edge energy shift, split, and effective mass were quantitatively evaluat- ed. Based on these valence band parameters, the dependence of hole mobility on uniaxial stress （direction, type, and magnitude） and hole transport direction was theoretical studied. The results show that the hole mobility had a strong dependence on the transport direction and uniaxial stress. The hole mobility enhancement can be found for all transport directions and uniaxial stess configurations, and the hole transport along the [110] direction under the uniaxial [110] compressive stress had the highest mobility compared to other transport directions and stress configurations.

关 键 词：Ge uniaxial stress valence band structure hole mobility 

分 类 号：O35[理学—流体力学]