Co-Pi和Cu_2O共修饰TiO_2薄膜及其光电化学性质研究  

Fabrication and Photoelectrochemical Properties of Co-Pi and Cu_2O Co-decorated TiO_2films

作　　者：姜春香[1] 沈明荣[1] 

机构地区：[1]苏州大学物理科学与技术学院,江苏苏州215006

出　　处：《常熟理工学院学报》2014年第4期51-54,共4页Journal of Changshu Institute of Technology

基　　金：高等学校博士学科点专项科研基金(博导类)资助项目"Cu2O过渡层提高PZT铁电梯度薄膜光电转换效率的研究"(91233109)

摘　　要：用阳极氧化法在Ti基片上制备出TiO2薄膜,然后通过电化学沉积法将Co-Pi和Cu2O沉积在TiO2薄膜表面.通过扫描电镜、X-射线衍射和光电化学性质测试,发现TiO2薄膜表面先沉积Co-Pi能够有效阻止Cu2O颗粒堆积,光电流显著提高.而先沉积Cu2O后沉积Co-Pi,则会使Cu2O还原为Cu,同时形貌发生改变.特别地,沉积300秒Co-Pi后再沉积Cu2O颗粒,能得到200 mA/cm2的最大光电流.TiO2 film is prepared on Ti substrates by anodic oxidation method. Then Co-Pi and Cu2O particles are fabricated on TiO2 flat surface using a facial electrochemical deposition method. Scanning electron microsco-py, X-ray diffraction and photoelectrochemical properties reflect that depositing Co-Pi particles in advance on the surface of TiO2 thin films can prevent Cu2O forming stacked particle structure, increase the photocurrent sig-nificantly, and deposit Co-Pi after Cu2O makes Cu2O reduction to Cu and that at the same time the morphology changes a lot. Specifically, when the deposition time of Co-Pi is set to be 300 s, the structure of TiO2/Co-Pi/Cu2O can get the maximum photocurrent of 200 A cm-2 .

关 键 词：TIO2薄膜 电化学沉积 光电化学性质 

分 类 号：O643.32[理学—物理化学]