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作 者:闫东芝[1] 炎正馨[1] 龚安[1] 陈倩[1] 廖谦[1]
出 处:《原子与分子物理学报》2014年第4期555-559,共5页Journal of Atomic and Molecular Physics
基 金:中国博士后特别资助(201003678);陕西省教育厅科学专项基金项目(12JK0965)
摘 要:在密度泛函理论耦合超软贋势第一性原理的平台上,研究了甲烷在Si(111)表面的物理吸附特性.通过建立硅晶胞的不同吸附位置(top、bridge、fcc)模型,对比分析了甲烷在相应位置吸附界面变化的键结构、吸附能和态密度,获得了相应吸附点的吸附特征.对比分析的结果表明,甲烷只有在fcc位置物理吸附状态较为理想.分析态密度、键长及键角等数据揭示fcc位甲烷吸附对体系硅晶胞有很大的影响,其体系的键能最低,即此时体系结构最稳定.本文所得研究成果可用于Si表面对甲烷气体的敏感性分析及气体传感器领域.The physical adsorption behavior of methane on Si (111)surface was investigated using first-principles calculations based on density-functional theory and ultrasoft pseudopotentials.To compara-tively analyze the adsorbing characteristics of methane,different adsorbing positions of Si (111)surface had been structured to figure out the more optimal absorbing position.In the paper,we set up three dif-ferent positions (top,bridge,fcc)of the adsorbing model.The interface structures changes were evi-denced by the bond structure,adsorption energy and density of states.The adsorption energy of meth-ane shows the fcc position is a favorite point for physical adsorption on Si (1 1 1 )surface.The data of density of states and bond structure clearly reveal that methane adsorbed on the fcc position of Si (111) which is with a lower adsorbing energy give a significant effect on the molecular structure of CH4/Si mixture.The obtained data and conclusion in this paper will be applied in the fields of the sensitive to methane of silicon surface and gas sensor technology.
分 类 号:O561.1[理学—原子与分子物理]
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