Enhanced Depth of Lift-off Pattern Defined with Soft Mold Ultraviolet Nanoimprint by Multi-Layer Masks  

Enhanced Depth of Lift-off Pattern Defined with Soft Mold Ultraviolet Nanoimprint by Multi-Layer Masks

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作  者:王智浩 刘文 左强 王磊 赵彦立 徐智谋 

机构地区:[1]WuhanNationalLaboratoryforOptoelectronics,SchoolofOpticalandElectronicinformation,HuazhongUniversityofScienceandTechnology,Wuhan430074 [2]StateKeyLaboratoryofOpticalCommunicationTechnologiesandNetworks,WuhanResearchInstituteofPostsandTelecommunications,Wuhan430074

出  处:《Chinese Physics Letters》2014年第8期160-162,共3页中国物理快报(英文版)

基  金:Supported by the National Natural Science Foundation of China under Grant Nos 11044009, A040507, 61076042 and 60607006, the Special Project on Development of National Key Scientific Instruments and Equipment of China under Grant No 2011YQ16000205, the National Key Technology Research and Development Program of China under Grant No 2009BAH49B01, the National High-Technology Research and Development Program of China under Grant Nos 2011AA010304 and 2011AA03A106, and the Grand Science and Technology Special Project in Hubei Province under Grant No 2009AAA009.

摘  要:The traditional lift-off process can hardly be carried out in ultraviolet nanoimprint defined patterns due to the poor solubility of the ultraviolet resist. Moreover, the depth of lift-off pattern defined by an ultraviolet nanoimprint is limited by that of the soft mold. In this work, a modified nanoimprint process by a multi-layer mask method is introduced to enhance the depth of the final lift-of[pattern. Pillar photonic crystal is fabricated from the hole pattern defined by NIL to prove the pattern-reversal capability. On its basis, combining the features of overetehing technology and the lateral diffusion phenomenon in the metal depositing process, pillar-shaped photonic crystal stamps with different duty cycles have been fabricated by adjusting the etching time of the lift-off layer. Based on this process, a 50-nm line width metal grating is fabricated from a soft stamp with an aspect ratio as low as 1.The traditional lift-off process can hardly be carried out in ultraviolet nanoimprint defined patterns due to the poor solubility of the ultraviolet resist. Moreover, the depth of lift-off pattern defined by an ultraviolet nanoimprint is limited by that of the soft mold. In this work, a modified nanoimprint process by a multi-layer mask method is introduced to enhance the depth of the final lift-of[pattern. Pillar photonic crystal is fabricated from the hole pattern defined by NIL to prove the pattern-reversal capability. On its basis, combining the features of overetehing technology and the lateral diffusion phenomenon in the metal depositing process, pillar-shaped photonic crystal stamps with different duty cycles have been fabricated by adjusting the etching time of the lift-off layer. Based on this process, a 50-nm line width metal grating is fabricated from a soft stamp with an aspect ratio as low as 1.

分 类 号:TN405[电子电信—微电子学与固体电子学] TQ658.24[化学工程—精细化工]

 

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