掺镱飞秒脉冲激光激发DAST晶体产生THz谱的可行性研究  

Feasibility of THz generation from DAST crystal excited by Yb-doped femtosecond laser

作　　者：罗从文[1] 赵振宇[1] 闫爱民[1] 胡志娟[1] 石旺舟[1] 陈之战[1] 

机构地区：[1]上海师范大学物理系,上海200234

出　　处：《华东师范大学学报（自然科学版）》2014年第4期88-93,共6页Journal of East China Normal University(Natural Science)

基　　金：国家的科学基金(61307130);上海师范大学创兴团队(DXL121);国家重点基础研究项目(2012CB326402);上海市教育委员会创新项目(14YZ077)

摘　　要：为了获得与掺镱飞秒脉冲激光匹配的高效太赫兹(THz)发射源,本文根据相位匹配原理,并结合DAST晶体多声子共振吸收,模拟了掺镱飞秒激光脉冲激发DAST晶体后获得的THz频谱.通过与CdTe、GaP等电光晶体比较后发现:当三种晶体厚度都为0.1mm时,DAST晶体可以获得12 THz带宽的发射频谱,超过CdTe的3.5 THz和GaP的6.4 THz;同时,其最大发射强度超过CdTe和GaP的10倍以上.因此,DAST晶体能够成为与掺镱飞秒激光匹配的高效THz发射源.We investigate the feasibility to generate broadband THz efficiently from the DAST crystM excited by anYttrium-doped femtosecond pulse laser. Taking account of the phase matching condition and the impact of THz absorption, we simulated the THz emission spectra of DAST, CdTe as well as GaP crystals excited at 1.03 #m. Given a fixed thickness of 0.1 mm, the DAST achieves 12 THz bandwidth, much larger than CdTe （3.5 THz） and GaP （6.4 THz）. Furthermore, the maximum emission amplitude of DAST exceed beyond 10 times of magnitude to CdTe or GaP crystals. Therefore, DAST crystal is proposed to be an efficient THz emitter adapt for Yttrium-doped femtosecond pulse lasers.

关 键 词：太赫兹波 掺镱飞秒脉冲激光 相位匹配 有机光学晶体 

分 类 号：TN209[电子电信—物理电子学]