具有高输出功率的多量子阱发光二极管的结构设计  

The Structure Design of High Power Multiple Quantum Well Light Emitting Diode

作　　者：刘映群[1] 丁向荣[2] 

机构地区：[1]电子信息工程学院,广东岭南职业技术学院,广东广州510663 [2]电子通信工程系,广东轻工职业技术学院,广东广州510300

出　　处：《量子光学学报》2014年第3期262-265,共4页Journal of Quantum Optics

摘　　要：设计了具有高量子效率的发光二极管(LED)芯片。通过采用Mg掺杂的AlInN-InGaN-AlInN作为LED的电子阻挡层,减小由极化引起的静电场,增大电子和空穴波函数的交叠比,从而增大了辐射复合速率。提高辐射复合速率有利于缓解电子泄露问题,增加了LED的发光功率,减小LED在大电流下的效率下降问题。新设计的芯片在大电流注入下,发光功率是传统结构的两倍。We invented fabricate high quantum efficiency light emitting diode chips. By using the Mg doped AIInN-InGaN-AIInN as electron blocking layer of the LED, the electrostatic field in the active region was reduced and the electron and hole wavefunction overlap was increased. The increased radiative recombination rate is beneficial to alleviate the electron leakage and increase the light output power. The output power of our newly designed LED chip is twice as much as the traditional one.

关 键 词：高量子效率 发光二极管 电子阻挡层 

分 类 号：O437[机械工程—光学工程] TN364[理学—光学]