Soft error reliability in advanced CMOS technologies—trends and challenges  

作　　者：TANG Du HE ChaoHui LI YongHong ZANG Hang XIONG Cen ZHANG JinXin 

机构地区：[1]School of Nuclear Science and Technology, Xi'an Jiaotong University

出　　处：《Science China(Technological Sciences)》2014年第9期1846-1857,共12页中国科学（技术科学英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.11175138);the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20100201110018);the Key Program of the National Natural Science Foundation of China(Grant No.11235008);the State Key Laboratory Program(Grant No.20140134)

摘　　要：With the decrease of the device size,soft error induced by various particles becomes a serious problem for advanced CMOS technologies.In this paper,we review the evolution of two main aspects of soft error-SEU and SET,including the new mechanisms to induced SEUs,the advances of the MCUs and some newly observed phenomena of the SETs.The mechanisms and the trends with downscaling of these issues are briefly discussed.We also review the hardening strategies for different types of soft errors from different perspective and present the challenges in testing,modeling and hardening assurance of soft error issues we have to address in the future.

关 键 词：soft error rate direct ionization indirect ionization multiple errors single event transient HARDENING CHALLENGES 

分 类 号：TN432[电子电信—微电子学与固体电子学]