Simulation of electrical characteristics and structural optimization for small-scaled dual-gate GeOI MOSFET with high-k gate dielectric  

作　　者：白玉蓉 徐静平 刘璐 范敏敏 

机构地区：[1]School of Optical and Electronic Information, Huazhong University of Science & Technology

出　　处：《Journal of Semiconductors》2014年第9期39-44,共6页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.61274112)

摘　　要：The influences of the main structure and physical parameters of the dual-gate GeOl MOSFET on the device performance are investigated by using a TCAD 2D device simulator. A reasonable value range of germanium （Ge） channel thickness, doping concentration, gate oxide thickness and permittivity is determined by analyzing the on-state current, off-state current, short channel effect （SCE） and drain-induced barrier lowering （DIBL） effect of the GeOI MOSFET. When the channel thickness and its doping concentration are 10-18 nm and （5-9）×1017 cm-3, and the equivalent oxide thickness and permittivity of the gate dielectric are 0.8-1 nm and 15-30, respectively, excellent device performances of the small-scaled GeOI MOSFET can be achieved： on-state current of larger than 1475 μA/μm, off-state current of smaller than 0.1μA/μm, SCE-induced threshold-voltage drift of lower than 60 mV and DIBL-induced threshold-voltage drift of lower than 140 mV.The influences of the main structure and physical parameters of the dual-gate GeOl MOSFET on the device performance are investigated by using a TCAD 2D device simulator. A reasonable value range of germanium （Ge） channel thickness, doping concentration, gate oxide thickness and permittivity is determined by analyzing the on-state current, off-state current, short channel effect （SCE） and drain-induced barrier lowering （DIBL） effect of the GeOI MOSFET. When the channel thickness and its doping concentration are 10-18 nm and （5-9）×1017 cm-3, and the equivalent oxide thickness and permittivity of the gate dielectric are 0.8-1 nm and 15-30, respectively, excellent device performances of the small-scaled GeOI MOSFET can be achieved： on-state current of larger than 1475 μA/μm, off-state current of smaller than 0.1μA/μm, SCE-induced threshold-voltage drift of lower than 60 mV and DIBL-induced threshold-voltage drift of lower than 140 mV.

关 键 词：GeOI MOSFET high-k gate dielectric short-channel effect drain-induced barrier lowering effect 

分 类 号：TN386[电子电信—物理电子学]