Evaluation of the drain–source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method  

作　　者：马琳 冯士维 张亚民 邓兵 岳元 

机构地区：[1]Institute of Semiconductor Device Reliability Physics, College of Electronic Information & Control Engineering,Beijing University of Technology

出　　处：《Journal of Semiconductors》2014年第9期60-64,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61376077,61201046,61204081);the Beijing Natural Science Foundation(Nos.4132022,4122005);the Guangdong Strategic Emerging Industry Project of China(No.2012A080304003);the Doctoral Fund of Innovation of Beijing University of Technology

摘　　要：The effect of drain-source voltage on A1GaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that A1GaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain-source voltage （VDs） is decreased. Moreover, the relatively low VDS and large drain-source current （IDs） result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low VDS leads to a relatively low electric field, which leads to the decline of the thermal resistance.The effect of drain-source voltage on A1GaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that A1GaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain-source voltage （VDs） is decreased. Moreover, the relatively low VDS and large drain-source current （IDs） result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low VDS leads to a relatively low electric field, which leads to the decline of the thermal resistance.

关 键 词：AIGaAs/InGaAs PHEMTs structure function method thermal resistance drain-source voltage 

分 类 号：TN386[电子电信—物理电子学]