Improved two-dimensional responsivity physical model of a CMOS UV and blue-extended photodiode  

作　　者：陈长平 田满芳 江震宇 金湘亮 罗均 

机构地区：[1]Faculty of Materials, Optoelectronics and Physics, Xiangtan University [2]Hunan Engineering Laboratory for Microelectronics, Optoelectronics and System on a Chip [3]Department of Precision Mechanical Engineering, Shanghai University

出　　处：《Journal of Semiconductors》2014年第9期76-82,共7页半导体学报（英文版）

基　　金：Project supported by the State Key Program of the National Natural Science Foundation of China(No.61233010);the National Natural Science Foundation of China(No.61274043);the Program for New Century Excellent Talents in University of Ministry of Education of China(No.NCET-11-0975)

摘　　要：A CMOS UV and blue-extended photodiode is presented and fabricated for light detection in the ultraviolet/blue spectral range. An octagon homocentric ring-shaped geometry is used to improve the ultraviolet responsivity and suppress edge breakdown. This paper has established a two-dimensional responsivity physical model for the presented photodiode and given some numerical analyses. The dead layer effect, which is caused by the high-doping effects and boron redistribution, is considered when analyzing the distribution of the current of the proposed UV and blue-extended photodiode. In the dead layer, the boron doping profile decreases towards the surface. Simulated results illustrate that the responsivity in the UV range is obviously decreased by the effect of the dead layer, while it is not affected in the visible and near-infrared part of the spectrum. The presented photodiode is fabricated and the silicon tested results are given, which agree well with the simulated ones.A CMOS UV and blue-extended photodiode is presented and fabricated for light detection in the ultraviolet/blue spectral range. An octagon homocentric ring-shaped geometry is used to improve the ultraviolet responsivity and suppress edge breakdown. This paper has established a two-dimensional responsivity physical model for the presented photodiode and given some numerical analyses. The dead layer effect, which is caused by the high-doping effects and boron redistribution, is considered when analyzing the distribution of the current of the proposed UV and blue-extended photodiode. In the dead layer, the boron doping profile decreases towards the surface. Simulated results illustrate that the responsivity in the UV range is obviously decreased by the effect of the dead layer, while it is not affected in the visible and near-infrared part of the spectrum. The presented photodiode is fabricated and the silicon tested results are given, which agree well with the simulated ones.

关 键 词：UV/blue-extended photodiode responsivity physical model dead layer effect CMOS process 

分 类 号：TN31[电子电信—物理电子学]