A 2.05 eV AlGaInP sub-cell used in next generation solar cells  

作　　者：陆宏波 李欣益 张玮 周大勇 石梦奇 孙利杰 陈开建 

机构地区：[1]Research Center for Photovoltaics, Shanghai Institute of Space Power-Source

出　　处：《Journal of Semiconductors》2014年第9期83-86,共4页半导体学报（英文版）

摘　　要：An Al0.13GalnP sub-cell used as the top cell in the next generation of high efficiency multi-junction solar cells is fabricated. An efficiency of 10.04% with 1457.3 mV in Voc and 11.9 mA/cm2 in Isc was obtained. QE comparison was carried out to verify the influence of an O-related defect introduced by the high Al-content materials on the cell performance during MOCVD growth. Hetero-structures are employed to confirm the origin of the decreasing short circuit current density compared to a GalnP single junction solar cell. An effective method to improve the performance of broadband solar cells by increasing Isc with a cost of Voc was proposed.An Al0.13GalnP sub-cell used as the top cell in the next generation of high efficiency multi-junction solar cells is fabricated. An efficiency of 10.04% with 1457.3 mV in Voc and 11.9 mA/cm2 in Isc was obtained. QE comparison was carried out to verify the influence of an O-related defect introduced by the high Al-content materials on the cell performance during MOCVD growth. Hetero-structures are employed to confirm the origin of the decreasing short circuit current density compared to a GalnP single junction solar cell. An effective method to improve the performance of broadband solar cells by increasing Isc with a cost of Voc was proposed.

关 键 词：broadband solar cell HETEROJUNCTION 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TU984.12[建筑科学—城市规划与设计]