Influence of temperature on tunneling-enhanced recombination in Si based p–i–n photodiodes  

作　　者：P.Dalapati N.B.Manik A.N.Basu 

机构地区：[1]Condensed Matter Physics Research Center, Department of Physics, Jadavpur University

出　　处：《Journal of Semiconductors》2014年第8期10-14,共5页半导体学报（英文版）

摘　　要：We investigate the dominant dark current transport mechanism in Si based p-i-n photodiodes, namely, BPW 21R, SFH 205FA and BPX 61 photodiodes in the temperature range of 350 to 139 K. The forward current- voltage characteristics of these photodiodes are explained via the tunneling enhanced recombination model, which gives a quantitative description of the electronic mechanism in the p-i-n junction photodiodes. The observed tem- perature dependence of the saturation current and the diode ideality factor of these devices agree well with theo- retical predictions; the analysis also indicates the importance of doping for enhancement of tunneling. The present study will be helpful in applying the devices at low temperature ambience.We investigate the dominant dark current transport mechanism in Si based p-i-n photodiodes, namely, BPW 21R, SFH 205FA and BPX 61 photodiodes in the temperature range of 350 to 139 K. The forward current- voltage characteristics of these photodiodes are explained via the tunneling enhanced recombination model, which gives a quantitative description of the electronic mechanism in the p-i-n junction photodiodes. The observed tem- perature dependence of the saturation current and the diode ideality factor of these devices agree well with theo- retical predictions; the analysis also indicates the importance of doping for enhancement of tunneling. The present study will be helpful in applying the devices at low temperature ambience.

关 键 词：PHOTODIODE low temperature ideality factor reverse saturation current tunneling energy 

分 类 号：TN31[电子电信—物理电子学]