A novel double trench reverse conducting IGBT with robust freewheeling switch  

作　　者：朱利恒 陈星弼 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

出　　处：《Journal of Semiconductors》2014年第8期79-83,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.51237001);the Fundamental Research Funds for the Central Universities(No.E022050205)

摘　　要：The phenomenon that the wide P-emitter region in the conventional reverse conducting insulated gate bipolar transistor （RC-IGBT） results in the non-uniform current distribution in the integrated freewheeling diode （FWD）, and then causes a parasitic thyristor to latch-up during its reverse-recovery process, which induces a hot spot in the local region of the device is revealed for the first time. Furthermore, a novel RC-IGBT based on double trench IGBT is proposed. It not only solves the snapback problem but also has uniform current distribution and high ruggedness during the reverse-recovery process.The phenomenon that the wide P-emitter region in the conventional reverse conducting insulated gate bipolar transistor （RC-IGBT） results in the non-uniform current distribution in the integrated freewheeling diode （FWD）, and then causes a parasitic thyristor to latch-up during its reverse-recovery process, which induces a hot spot in the local region of the device is revealed for the first time. Furthermore, a novel RC-IGBT based on double trench IGBT is proposed. It not only solves the snapback problem but also has uniform current distribution and high ruggedness during the reverse-recovery process.

关 键 词：reverse conducting insulated gate bipolar transistor SNAPBACK current concentration 

分 类 号：TN322.8[电子电信—物理电子学]