Impact of temperature on single event upset measurement by heavy ions in SRAM devices  

作　　者：刘天奇 耿超 张战刚 赵发展 古松 童腾 习凯 刘刚 韩郑生 侯明东 刘杰 

机构地区：[1]Institute of Modern Physics, Chinese Academy of Sciences [2]University of Chinese Academy of Sciences [3]Institute of Microelectronics, Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2014年第8期98-103,共6页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.11179003,10975164,10805062,11005134)

摘　　要：The temperature dependence of single event upset （SEU） measurement both in commercial bulk and silicon on insulator （SOI） static random access memories （SRAMs） has been investigated by experiment in the Heavy Ion Research Facility in Lanzhou （HIRFL）. For commercial bulk SRAM, the SEU cross section measured by 12C ions is very sensitive to the temperature. The temperature test of SEU in SOl SRAM was conducted by 209Bi and 12C ions, respectively, and the SEU cross sections display a remarkable growth with the elevated temperature for 12C ions but keep constant for 209Bi ions. The impact of temperature on SEU measurement was analyzed by Monte Carlo simulation. It is revealed that the SEU cross section is significantly affected by the temperature around the threshold linear energy transfer of SEU occurrence. As the SEU occurrence approaches saturation, the SEU cross section gradually exhibits less temperature dependency. Based on this result, the experimental data measured in HIRFL was analyzed, and then a reasonable method of predicting the on-orbit SEU rate was proposed.The temperature dependence of single event upset （SEU） measurement both in commercial bulk and silicon on insulator （SOI） static random access memories （SRAMs） has been investigated by experiment in the Heavy Ion Research Facility in Lanzhou （HIRFL）. For commercial bulk SRAM, the SEU cross section measured by 12C ions is very sensitive to the temperature. The temperature test of SEU in SOl SRAM was conducted by 209Bi and 12C ions, respectively, and the SEU cross sections display a remarkable growth with the elevated temperature for 12C ions but keep constant for 209Bi ions. The impact of temperature on SEU measurement was analyzed by Monte Carlo simulation. It is revealed that the SEU cross section is significantly affected by the temperature around the threshold linear energy transfer of SEU occurrence. As the SEU occurrence approaches saturation, the SEU cross section gradually exhibits less temperature dependency. Based on this result, the experimental data measured in HIRFL was analyzed, and then a reasonable method of predicting the on-orbit SEU rate was proposed.

关 键 词：single event upset temperature dependence static random access memory Monte Carlo simulation 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]