基于CMOS工艺钨微测辐射热计阵列集成芯片的设计与制作  

The Design and Fabrication of a Tungsten Microbolometer Array Integrated Chip in a Standard CMOS Process

作　　者：申宁[1] 余隽[1] 唐祯安[1] 

机构地区：[1]大连理工大学电子科学与技术学院,辽宁大连116023

出　　处：《传感技术学报》2014年第6期725-729,共5页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金项目(61131004;61274076)

摘　　要：采用0.5μm标准CMOS工艺和微机械加工工艺,设计并制作了低成本4×4钨微测辐射热计阵列集成芯片。阵列中每个钨微测辐射热计均由微悬桥结构和钨热敏电阻组成,CMOS读出电路集成在阵列下方。微悬桥结构由表面牺牲层技术实现,不需要任何的光刻工艺。钨微测辐射热计像元尺寸为100μm×100μm,填充因子为20%。测试结果表明,在真空环境下,钨微测辐射热计等效热导为1.31×10-4W/K,等效热容为1.74×10-7J/K,热时间常数为1.33 ms。当红外光源的斩波频率为10 Hz时,钨微测辐射热计的电压响应率为1.91×103V/W,探测率为1.88×107cm·Hz1/2/W。This paper introduces the implementation of a low-cost 4×4 uncooled infrared tungsten microbolometer array integrated chip in a standard 0.5 μm CMOS technology and micromachining processes. Each tungsten microbolometer in the array consists of a micro-bridge structure and a Tungsten thermistor. CMOS readout circuit is integrated under the array. The micro-bridge structure can be created by etching the surface sacrificial layer after the CMOS fabrication, without any additional lithography procedure. The microbolometer has a size of 100μm×100μm and a fill factor of 20%. Measurements show the effective thermal conductance of 1.31× 10^-4 W/K, the thermal time constant of 1.33 ms and the effective thermal mass of 1.74× 10^-7 J/K in vacuum environment. The responsivity of the microbolometer is about 1.91× 10^4 V/W at 10 Hz and the calculated deteetivity is 1.88× 10^7 cm＇nzi/2/W.

关 键 词：CMOS红外探测器 钨微测辐射热计 表面牺牲层技术 低成本红外探测器 红外焦平面阵列 

分 类 号：TN215[电子电信—物理电子学]