IGBT功耗计算及其优化的研究  

Calculation and optimization method of IGBT power consumption

作　　者：王瑞[1] 

机构地区：[1]宝鸡文理学院物理与信息技术系,陕西宝鸡721013

出　　处：《现代电子技术》2014年第17期122-124,共3页Modern Electronics Technique

摘　　要：绝缘栅双极晶体管(IGBT)因具备双极和功率MOSFET两种特性的独特优势,在超高电压电力传输、新能源的开发利用等方面获得广泛应用。但目前国内IGBT发展滞后,且其功耗性能及优化一直是国际上功率器件领域内研究的热点和难点。在先前研究的IGBT模型的基础上,对PSpice软件仿真所得的实验数据利用一种新的计算方法,对IGBT的静态功耗和动态功耗进行了定量计算,并与实际IGBT的功耗值进行对比。结果表明,两者的数据基本一致,同时对IGBT功耗的优化进行了探讨研究。Insulated gate bipolar transistor（IGBT）is widely used in ultra high voltage power transmission and new energy development utilization duo to its unique advantage of bipolar and MOSFET characteristics. In fact,the IGBT development in China lags behind,and its power performance and optimization have been the hotspot and difficulty in the field of power devices in the world. Based on previous studies on IGBT model,a new method to quantitatively calculate the static and dynamic power consumption of IGBT by using the experimental data of PSpice software simulation is proposed. The calculated data was com-pared with the actual power consumption values of IGBT. The results show that the data is consistent with the values. The optimi-zation of IGBT power consumption is discussed in this paper.

关 键 词：IGBT 静态功耗 动态功耗 MOSEET PSPICE 

分 类 号：TN322.8[电子电信—物理电子学]