有机半导体NPB空穴迁移率的快速确定  

Fast determination of hole mobility in organic semiconductor NPB

作　　者：吴有智[1,2] 马继晶[1,2] 张运虎[1,2] 张材荣[3] 张定军[1,2] 

机构地区：[1]省部共建有色金属先进加工与再利用国家重点实验室,甘肃兰州730050 [2]兰州理工大学材料科学与工程学院,甘肃兰州730050 [3]兰州理工大学理学院,甘肃兰州730050

出　　处：《兰州理工大学学报》2014年第4期97-100,共4页Journal of Lanzhou University of Technology

基　　金：国家自然科学基金(11164015;11164016);教育部留学回国人员科研启动基金(第40批)

摘　　要：以典型有机半导体材料——胺类衍生物NPB（N,N’-diphenyl-N,N’-bis（1-naphthyl）（1,1’-biphenyl）-4,4’diamine）为空穴传输层,采用MoO3为阳极缓冲层制备结构简单的只有空穴传输的单载流子器件.以空间电荷理论为基础,利用从器件电流-电压关系变换而来的一个特殊而简单的函数确定出电场强度在600~1 000V1/2cm^-1/2时,NPB空穴迁移率位于1.1×10^-5~3.5×10^-4 cm2 V^-1s^-1,这与文献报导采用其他方法得到的结果接近,表明这是一种简单而有效的确定有机半导体载流子迁移率的方法,同时也表明MoO3为阳极缓冲层可在ITO/NPB间形成良好的欧姆接触.Using the typical organic semiconductive material -- amine derivative l-N, N＇-diphenyl-N, N＇- bis （1-naphthyl） （1,1 ＇-biphenyl）-4,4＇ diamine, NPB] as hole transporting layer and MoO3 as anode buffer layer, a mono-carrier device with simple structure and hole transportation alone was fabricated. Based on space charge-limited-current theory and employing a special and simple function obtained from currentvoltage transformation of the device, the hole mobility of NPB was determined to be within the range of 1.1×10^-5~3.5×10^-4 cm2 V^-1s^-1 when the electrical field intensity is between 600 and 1000 V1/2cm^-1/2, which is in very good consistence with that of other method reported in the literature, indicating that this is a simple and effective way to determine carrier mobility in organic semiconductors and a fine ohmic con- tact can be formed between ITO and NPB when MoO3 is used as an anode buffer layer.

关 键 词：有机半导体 NPB 空穴迁移率 空间电荷 

分 类 号：TN301.1[电子电信—物理电子学]