NiFeNb缓冲层和NiO插层对坡莫合金薄膜各向异性磁电阻的影响  

Effect of NiFeNb Buffer and NiO Insertion Layers on Anisotropic Agnetoresistance of Ni_(81)Fe_(19)Thin Films

作　　者：王书运[1] 张慧[1] 高垣梅[1] 高铁军[1] 姚远[1] 

机构地区：[1]山东师范大学物理与电子科学学院,济南250014

出　　处：《真空科学与技术学报》2014年第8期847-851,共5页Chinese Journal of Vacuum Science and Technology

基　　金：山东省自然科学基金资助项目(ZR2009FM028;ZR2013EMM009)

摘　　要：采用NiFeNb材料为坡莫合金薄膜的缓冲层,利用磁控溅射系统制备了一系列(Ni81Fe19)80.7Nb19.3(x)/NiO(y)/Ni81Fe19(20 nm)/NiO(y)/Nb(3 nm)坡莫合金薄膜样品,研究了(Ni81Fe19)80.7Nb19.3缓冲层厚度、NiO插层厚度和基片温度对坡莫合金薄膜各向异性磁电阻和微结构的影响。用非共线四探针法测量薄膜样品的各向异性磁电阻值(AMR),用X射线衍射仪分析样品的微结构,用FD-SMOKE-A表面磁光克尔效应实验系统测量不同基片温度下制备的薄膜的磁滞回线。结果表明:(Ni81Fe19)80.7Nb19.3缓冲层及NiO插层都可有效的提高坡莫合金薄膜的AMR值;对于厚度为20 nm的Ni81Fe19坡莫合金薄膜,在NiFeNb缓冲层厚度为2 nm,NiO层厚度为4 nm,基片温度为450℃的条件下,其AMR值最大达到5.25%,比以Ta为缓冲层的薄膜的AMR值提高了60.6%。此时的坡莫合金薄膜出现了较好的(111)织构和大晶粒现象,减少了晶界对传导电子的散射,导致薄膜的AMR值提高。The Ni81Fe19 permalloy films with NiFeNb buffer and NiO insertion layers were synthesized by magnetron sputtering on coming glass substrate. The influence of the deposition conditions, including the thickness of buffer and insertion layers, deposition rates, and substrate temperature, on the anisotropic magneto-resistance（AMR）of the Ni81Ee19 films was investigated with X-ray diffraction,four-point probe,and FD-SMOKE-A. The results show that the thickness of NiFeNb buffer and insertion NiO layers considerably increases the AMR of the pennalloy. For example, as the NiFeNb buffer layer increased, the AMR changed in an increase-decrease mode. The 20 nm thick Ni81Fe19 film, synthesized at 450℃ with 2 nm NiFeNb and 4 nm NiO,has the maximum AMR of 5.25% ,60.6 % higher than that of the Ni81Fe19 films grown with Ta-buffer layer. The larger grain size with good（ 111 ）texture weakens boundary scattering of conduction electrons, explaining the possibly mechanisms responsible for the AMR enhancement.

关 键 词：坡莫合金薄膜 NiFeNb缓冲层 NiO插层 各向异性磁电阻 

分 类 号：TM271[一般工业技术—材料科学与工程] O484.4[电气工程—电工理论与新技术]