Si-PIN探测器特征参数的MCNP模拟  

MCNP Simulation on Characteristic Parameters of Si-PIN Detector

作　　者：甘霖[1] 赖万昌[1] 邓海军[1] 石慧[1] 周云泷 崔荃[1] 

机构地区：[1]成都理工大学核技术与自动化工程学院,成都610059

出　　处：《核电子学与探测技术》2014年第4期538-541,共4页Nuclear Electronics & Detection Technology

基　　金：国家863基金(2012AA06180301)资助

摘　　要：实验运用蒙特卡罗方法模拟X射线在Si-PIN探测器中的能量沉积。针对所选择的每个能量,改变Si-PIN探测器灵敏区厚度、半径,模拟出X射线计数率,从中选择出灵敏区最佳结构组合。并与DeBoer算法和Mcmaster算法的理论计算结果进行对比,结果表明MCNP5程序能准确地模拟X射线在Si-PIN探测器中的物理过程,且选取的灵敏区最佳组合具有较高的可靠性。We simulate the X-ray energy deposition in Si -PIN detector by using monte carlo method in the experiment .The procedure is to change the thickness and radius of Si -PIN detector＆#39;s sensitive region for each selected energy to simulate the X -ray count rate and choose the best structure of sensitive areas .With the comparison of data in experiment and theoretical calculation in DeBoer and Mcmaster algorithm , the results show that MCNP5 program can simulate the physical process of X -ray in Si-PIN detector accurately , and the selecting for optimal combination of sensitive area has high reliability .

关 键 词：SI-PIN探测器 探测效率 灵敏区结构 蒙特卡罗方法 

分 类 号：TL814[核科学技术—核技术及应用]