单晶黑硅微结构对其反射率影响的研究  

Study on the effect of single-crystalline black silicon microstructure on its surface reflectance

作　　者：岳之浩[1,3] 沈鸿烈[1,2] 蒋晔[1] 陈伟龙[1] 唐群涛 商威 

机构地区：[1]南京航空航天大学材料科学与技术学院,南京210016 [2]南京航空航天大学,纳米智能材料器件教育部重点实验室,南京210016 [3]中天光伏技术有限公司,江苏南通226015

出　　处：《功能材料》2014年第16期16056-16060,共5页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(2006AA03Z219);江苏省前瞻性联合创新资助项目(BY2013003-08)

摘　　要：采用Ag辅助化学腐蚀法在不同H2O2 浓度、腐蚀温度和腐蚀时间条件下制备了单晶黑硅微结构,并系统地研究了这种微结构对表面反射率的影响规律.采用场发射扫描电子显微镜对样品形貌进行了观察,并利用分光光度计对样品的表面反射率进行了测试,最终采用陷光模型对黑硅微结构与其反射率的关系进行了深入分析.发现当腐蚀液为7.8 mol/LHF和0.6mol/LH2O2 混合液、腐蚀温度为20 ℃以及腐蚀时间为90s时,所制备黑硅的腐蚀深度为900nm,其表面平均反射率为0.98% （400-900nm）.In this study,single-crystalline black silicon microstructures were fabricated by Ag-assisted chemical etching method under different H2 O2 concentration,etching temperature and etching time.Besides,the effects of the black silicon microstructures on the surface reflectance were systematically studied.Scanning electron mi-croscope and spectrophotometer were used to observe the microstructures and to test the surface reflectance,re-spectively.In addition,the relation between the microstructures and reflectance was deeply investigated by u-sing two light-trapping models.Finally,single-crystalline black silicon with average reflectance of 0.98% from 400 to 900 nm was obtained by etching in a 7.8 mol/L HF and 0.6 mol/L H2 O2 mixed solution for 90 s at 20 ℃resulting in an etching depth of 900 nm.

关 键 词：Ag辅助化学腐蚀法 单晶硅 微结构 反射率 

分 类 号：TB34[一般工业技术—材料科学与工程] TN36[电子电信—物理电子学]