PLD Preparation of GeS_6 Amorphous Film and Investigation on Its Photo-induced Darkening Phenomenon  

PLD Preparation of GeS_6 Amorphous Film and Investigation on Its Photo-induced Darkening Phenomenon

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作  者:刘刚 顾少轩 ZHANG Haochun ZHANG Ning TAO Haizheng 

机构地区:[1]School of Electronic Information, Wuhan University [2]State Key Laboratory of Silicate Materials for Architectures(Wuhan University of Technology)

出  处:《Journal of Wuhan University of Technology(Materials Science)》2014年第4期665-668,共4页武汉理工大学学报(材料科学英文版)

基  金:Funded by the National Natural Science Foundation of China(51172169,51372180);the Program for New Century Excellent Talents in University(NCET-11-0687)

摘  要:GeS6 chalcogenide amorphous fi lm was deposited on glass substrate via PLD(pulsed laser deposition) technique. The performance and structure of the fi lm was characterized by XRD(X-ray diffraction), SEM(Scanning Electron Microscopy), EDS(Energy Dispersive Spectroscopy), optical transmission spectra, and Raman spectra, etc. The GeS6 amorphous fi lm was irradiated by 532 nm linearly polarized light, and its photoinduced darkening was investigated. The results showed that the GeS6 chalcogenide amorphous fi lm was smooth and compact with uniform thickness and combined with the substrate fi rmly, and its chemical composition was in consistency with the bulky target. When laser energy was fi xed, the transparence of the fi lm declined with the increase of the laser irradiation time. Obvious photo-induced darkening and relaxation phenomenon of the fi lm after laser irradiation were observed in this investigation.GeS6 chalcogenide amorphous fi lm was deposited on glass substrate via PLD(pulsed laser deposition) technique. The performance and structure of the fi lm was characterized by XRD(X-ray diffraction), SEM(Scanning Electron Microscopy), EDS(Energy Dispersive Spectroscopy), optical transmission spectra, and Raman spectra, etc. The GeS6 amorphous fi lm was irradiated by 532 nm linearly polarized light, and its photoinduced darkening was investigated. The results showed that the GeS6 chalcogenide amorphous fi lm was smooth and compact with uniform thickness and combined with the substrate fi rmly, and its chemical composition was in consistency with the bulky target. When laser energy was fi xed, the transparence of the fi lm declined with the increase of the laser irradiation time. Obvious photo-induced darkening and relaxation phenomenon of the fi lm after laser irradiation were observed in this investigation.

关 键 词:GeS_6 chalcogenide amorphous film pulsed laser deposition photo darkening 

分 类 号:TB383.2[一般工业技术—材料科学与工程]

 

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