一种高精度电流型CMOS带隙基准电压源设计  

A High Precision Current-Mode CMOS Bandgap Voltage Reference

作　　者：崔嘉杰[1] 罗萍[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《微电子学》2014年第4期416-419,共4页Microelectronics

基　　金：国家自然科学基金资助项目(61274027);博士点基金资助项目(20120185110005)

摘　　要：基于CSMC 0.5μm标准CMOS工艺,设计了一种高精度电流型CMOS带隙基准电压源。仿真结果表明,温度在-40℃-125℃范围内,基准输出电压的温度系数为1.3×10-5/℃;电源电压在3.3-5 V之间变化时,基准输出电压变化为0.076 mV,电源抑制比PSRR为-89 dB。同时,该电路包含修调电路,可在不同工艺角下进行校正,具有温度系数低、电源抑制比高、精度高等特点。Abstract： A high precision current-mode CMOS bandgap voltage reference source was designed based on CSMC 0.5 μn standard CMOS process. The simulation results showed that the temperature coefficient of the output voltage wss 1.3×10-5/℃ in a range of temperature from -40℃ to 125 ℃, the output voltage had a change of 0.076 mV when the power supply voltage varies from 3.3 to 5 V, and the PSRR was -89 dB. At the same time, the output voltage could be adjusted under different process comers by adopting the trimming circuit, and the reference circuit features low temperature coefficient, high power supply rejection ratio and high precision.

关 键 词：基准电压源 线性补偿 电源抑制比 

分 类 号：TN432[电子电信—微电子学与固体电子学]