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机构地区:[1]吉林大学物理学院超硬材料国家重点实验室,长春130012 [2]集成光电子国家重点实验室,吉林大学电子科学与工程学院,长春130012
出 处:《长春理工大学学报(自然科学版)》2014年第4期44-47,共4页Journal of Changchun University of Science and Technology(Natural Science Edition)
基 金:"863"国家技术研究发展计划项目(2011AA050509);国家自然科学基金项目(61106039;51272087;51272084);国家博士后基金项目(2011049015);长春市科技计划项目(11GH15)
摘 要:ZnCuInS/ZnS(QDs)量子点是一种不含重金属半导体的纳米材料,以无机前驱体和非配位溶剂为基础,合成得到尺寸为3.2nm的ZnCuInS/ZnS核壳量子点,通过测量ZnCuInS/ZnS量子点光致发光光谱,其发射峰波长约为700nm,半宽度为110nm。同时,以GaN蓝光芯片为基础,制备了ZnCuInS/ZnS量子点荧光粉LED发光二极管,并对其发光特性进行了研究。在恰当的偏置电压下,逐渐改变滴涂在底层为蓝色GaN LED芯片上的ZnCuInS/ZnS量子点溶液浓度,观察到红光逐渐增强,随之蓝光逐渐减弱,其发射光CIE色坐标发生改变,并可以得到较好的红光光谱。In this paper,ZnCuInS/ZnS quantum dots(QDs)have been studied as an excellent red emitting source for blue GaN LED because of its non-toxic deep red emmission and large Stokes shift properties.ZnCuInS/ZnS core/shell quantum dots were prepared with the particle size of 3.2nm.According to the measurement of photoluminescence spectrum emitted by ZnCuInS/ZnS core/shell quantum dots,the emitting peak of 700 nm and the full width at half-maxim of 110 nm were achieved as red emitter. It was found that absorption edge and photoluminescence peak shifted to shorter wavelength with decreasing the nanocrystal size due to quantum size effect.Meanwhile,ZnCuInS/ZnS core/shell quantum dot light emitting diodes and their photoluminescence properties were studied. After the suitable bias was applied on the films,increasing the ZnCuInS/ZnS QDs concentration in the blue GaN chips,red emission is increased(peak emission at 700 nm and FWHM 110nm)with decreasing LED's blue light.
关 键 词:ZnCuInS/ZnS量子点 GaNLED 光致发光 荧光粉
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